Achieving rapid transport of photogenerated carriers and efficient separation of charges in physical space are essential prerequisites for creating high-performance photovoltaic devices. This demands that carriers possess high mobility and low recombination rates within the light-absorbing layer, while their separation and subsequent transport at the interface between the light-absorption layer and the electron/hole transport layers significantly affect the overall device performance. Scientific studies have led to the development of high-efficiency lead halide perovskite polycrystalline films with grain sizes nearing the micron scale. These films exhibit an effective diffusion length for photogenerated carriers that surpasses the film’s thickness, enabling fast transport at extremely low recombination rates. Advances in perovskite film fabrication techniques have dramatically enhanced device performance, making interface properties the key bottleneck in the progress of perovskite solar cells. For positive-structured perovskite solar cells, constructing two-dimensional/three-dimensional heterostructures on the perovskite film surface has been shown to effectively adjust the energy level structure of the top interface, thus improving the efficiency of carrier separation and subsequent transport. However, since the interface modification materials are vulnerable to damage during the subsequent perovskite film preparation process, passivating the buried interface (the lower interface, i.e., the perovskite light-absorption layer/electron transport layer interface) remains in its developmental stages. Recently, the Shenyang National Research Center for Materials Science, Institute of Metals, Chinese Academy of Sciences collaborated with Huaqiao University and the Swiss Federal Institute of Technology in Lausanne to develop a method for reconstructing the buried interface energy level structure of devices. This approach leverages the self-diffusion doping process, achieving both efficient separation of interfacial photogenerated carriers and passivation of device interface defects. On August 25, the relevant research findings were published in *Advanced Functional Materials* under the title *Robust Interfacial Modifier for Efficient Perovskite Solar Cells: Reconstruction of Energy Alignment at Buried Interface by Self-Diffusion of Dopants*, and related patents have been filed. The researchers introduced an amino acid derivative, potassium L-aspartate (PL-A), at the interface between the perovskite film and the tin dioxide (SnO2) electron transport layer to modify the buried interface properties of the device. The study revealed that the carboxyl group (-COO-) on PL-A interacts with SnO2, passivating its surface defects; simultaneously, the amino group (-NH2) on PL-A coordinates with PbI2, passivating the lower surface defects of the perovskite film (Figure 1). These actions suppress the non-radiative recombination of photogenerated carriers at the perovskite film/electron transport layer interface. Further analysis showed that potassium ions from PL-A diffuse into the perovskite film, forming gradient doping (Fig. 2a-f), which optimizes the energy level structure on the perovskite side of the interface (Fig. 2g-h) and promotes carrier transport within the film. Computational results indicate that PL-A at the interface forms an orientation distribution (Fig. 1e), generating an additional dipole that regulates the SnO2 work function, thereby reducing open-circuit voltage (Voc) losses. Through the coordinated optimization of these functions, the device's performance has significantly improved. Combined with the team’s previous research on optimizing the top device interface (Nano Energy 2021, 90, 106537), the photoelectric energy conversion efficiency reached up to 23.74% (Figure 3). Additionally, this interface modification process demonstrates good performance enhancement effects in large-area device fabrication. This research was supported by the National Natural Science Foundation of China, the Liaoning Provincial Natural Science Foundation of China, and the Shenyang National Research Center for Materials Science. The work presented here represents a promising step forward in the field of perovskite solar cells, offering new insights into how interface engineering can be used to enhance device efficiency. Future studies will focus on further refining these methods to achieve even higher efficiencies and stability, paving the way for practical applications of perovskite solar cells in renewable energy solutions.

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